【优质展商】晶彩科技——优质半导体级碳化硅粉料供应商！

IACE CHINA 2026

由新之联伊丽斯（上海）展览有限公司主办的“第18届中国国际先进陶瓷展览会”将于2026年3月24-26日在国家会展中心（上海）隆重举办。展览内容涵盖先进陶瓷领域原材料、机械设备、部件产品及服务等整条工艺链。展会规模达55,000平方米，云集1,000+家中外企业参展，参展品牌2,000个，国内外观众预计将达到80,000人次。

优质展商揭幕

绍兴晶彩科技有限公司

国家会展中心（上海）

1.1馆 L093

主营产品

MAIN PRODUCTS

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IACE CHINA 2026

01

高纯碳化硅陶瓷粉

High-purity silicon carbide ceramic powder

产品简介

主要功能及技术亮点:

碳化硅陶瓷不仅具有优良的常温力学性能，如抗弯强度、抗氧化性、耐腐蚀性、抗磨损性以及较低的摩擦系数等，而且高温力学性能是已知陶瓷材料中最佳的，如反应烧结、重结晶烧结、热等静压烧结等工艺生产的碳化硅陶瓷制品，其高温强度可一直维持到1600℃，是所有陶瓷材料中高温强度最好的材料。

Silicon carbide ceramics not only possess excellent room-temperature mechanical properties, such as flexural strength, oxidation resistance, corrosion resistance, wear resistance, and a low coefficient of friction, but also exhibit the best high-temperature mechanical properties among known ceramic materials. Products made from silicon carbide ceramics using processes like reaction sintering, recrystallization sintering, and hot isostatic pressing can maintain their high strength up to 1600°C, making them the ceramic materials with the best high-temperature strength.

本公司在高精密陶瓷粉体材料方面主要生产3C晶型百微米级、微米级、亚微米级碳化硅粉体，产品纯度可实现 4N-6N 调控，产品具有纯度高、粒径均一、体积分数高、高结晶度等优点。

Our company primarily produces 3C crystalline silicon carbide powder in micrometer and sub-micrometer sizes. Our products feature high purity, uniform particle size, high volume fraction, and high crystallinity, with purity levels controllable from 4N to 6N.

市场优势:

碳化硅陶瓷在国内是近二十年才开始发展的新材料，一方面，从产品供应角度来看，近几年碳化硅制造企业如雨后春笋般冒出，并且都在快速增长，为各行业、领域提供了丰富的产品；碳化硅陶瓷在石油化学工业中已被广泛地用作各种耐腐蚀用容器及管道；在机械工业中已被成功地用作各种轴承、切削刀具和机械密封部件；在航天和汽车工业中也被认为是未来制造燃气轮机、火箭喷嘴和发动机部件最有希望的候选材料。

Silicon carbide ceramics are a relatively new material in China, having developed only in the past two decades. On the supply side, silicon carbide manufacturing enterprises have emerged like mushrooms after rain and are growing rapidly, providing rich products for various industries and fields. Silicon carbide ceramics have been widely used in the petrochemical industry as various corrosion-resistant containers and pipelines; in the mechanical industry, they have been successfully used as various bearings, cutting tools, and mechanical seal components; in the aerospace and automotive industries, they are also considered the most promising candidate materials for manufacturing gas turbines, rocket nozzles, and engine components.

另一方面，从市场需求角度来看，受国家政策和产业结构调整的影响，传统建筑卫生陶瓷行业对碳化硅陶瓷产品的需求有所减少，但环保、新能源等行业对碳化硅陶瓷产品的需求增加，同时在半导体行业、军工航天及其它新兴领域仍有较大的需求潜力。

On the demand side, influenced by national policies and industrial structure adjustments, demand for silicon carbide ceramic products in traditional building and sanitary ceramics industries has decreased. However, demand in environmental protection, new energy, and other industries has increased. Simultaneously, there remains significant demand potential in semiconductor, military aerospace, and other emerging fields.

应用领域：

半导体/光伏制程中专用高性能结构陶瓷领域、金属表面碳化硅复合镀层、硅橡胶轮胎及工程塑料耐磨填料、耐高温填料等领域。

High-performance structural ceramics for semiconductor and photovoltaic processes, metal surface silicon carbide composite plating, silicon rubber tires and engineering plastic wear-resistant fillers, high-temperature fillers, etc.

IACE CHINA 2026

02

高纯碳化硅多晶粉

High-Purity Polycrystalline Silicon Carbide Powder

产品简介

主要功能及技术亮点:

碳化硅晶体材料是新一代宽禁带半导体材料,可以突破硅基半导体材料的理论限制,它具有热导率高(硅的3倍)、击穿电场强度高(硅的10倍 )、饱和电子漂移速度高(硅的2倍)、介电常数小、抗辐射能力强以及良好的化学稳定性、与 Ga N晶格失配小(4%)等特点，是新一代发光二极管(LED)衬底材料、大功率电力电子材料。

Silicon carbide (SiC) crystal material is a new generation of wide-bandgap semiconductor materials that can break through the theoretical limits of silicon-based semiconductor materials. It possesses characteristics such as high thermal conductivity (3 times that of silicon), high breakdown electric field strength (10 times that of silicon), high saturated electron drift velocity (2 times that of silicon), small dielectric constant, strong radiation resistance, and good chemical stability, as well as a small lattice mismatch with GaN (4%). It is a new generation of light-emitting diode (LED) substrate materials and high-power electronic materials.

本公司生产的此类产品主要针对第三代半导体碳化硅单晶的生长需求，粒径可实现百微米到毫米级精准控制，产品纯度可达6N和6.8N两个级别，其中半绝缘型产品氮含量低于 0.5ppm,导电型产品氮含量可根据需求选择不同含量区间（<5ppm；5ppm - 20ppm；20ppm - 40ppm；40ppm - 60ppm；> 60ppm）类型。

Products of this type produced by our company are mainly aimed at the growth requirements of third-generation semiconductor silicon carbide single crystals. Particle size can be precisely controlled in the range of micrometers to millimeters, and product purity can reach two levels: 6N and 6.8N. Among them, the nitrogen content of semi-insulating products is below 0.5 ppm, and the nitrogen content of conductive products can be selected according to demand in different concentration intervals (<5 ppm; 5 ppm - 20 ppm; 20 ppm - 40 ppm; 40 ppm - 60 ppm; > 60 ppm).

市场优势:

目前，国内没有成熟的适用于半绝缘碳化硅单晶材料制备的高纯碳化硅粉生产企业，少数几家公司和科研单位采用固相烧结法进行高纯碳化硅粉源的研制，自产自用，但产品质量稳定性差，高纯半绝缘成品率很低。

Currently, there are no mature high-purity silicon carbide powder enterprises suitable for the preparation of semi-insulating silicon carbide single crystal materials in China. A few companies and research units adopt the solid-state sintering method to develop high-purity silicon carbide powder sources, but the product quality stability is poor, and the high-purity semi-insulating yield is very low.

本公司采用“无引发悬浮聚合法”技术制备高纯碳化硅多晶粉，克服了传统方法的一系列瓶颈问题，是一次重大创新与突破，原材料来源及工艺技术打破了国际封锁，该方法为国际首创。公司产品已经通过多家碳化硅单晶企业验证，满足下游客户需求，已经批量化采购及生产使用。

Our company adopts the "internally initiated suspension polymerization method" technology to prepare high-purity silicon carbide polycrystalline powder, overcoming a series of bottleneck problems of traditional methods. This is a major innovation and breakthrough. The raw material sources and process technology break through international blockades, and this method is an international first. Our products have been verified by multiple silicon carbide single crystal enterprises and meet downstream customer needs, and have been batch-purchased and put into production use.

应用领域：

产品用于制作高温、高压、大功率、抗辐照的半导体功率器件，此类器件广泛应用于5G通信、高铁、汽车电子、智能电网、光伏逆变等领域。

Products are used to manufacture high-temperature, high-pressure, high-power, and radiation-resistant semiconductor power devices. These devices are widely applied in fields such as 5G communication, high-speed rail, automotive electronics, smart grids, and photovoltaic inverters.

IACE CHINA 2026

03

重结晶制品用高纯碳化硅粉

High-Purity Silicon Carbide Powder for Recrystallized Products